D45H5 PNP Silicon Power Transistors. STMicroelectronics PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST. D45H5 Datasheet, D45H5 PDF, D45H5 Data sheet, D45H5 manual, D45H5 pdf, D45H5, datenblatt, Electronics D45H5, alldatasheet, free, datasheet. Collector-emitter voltage (IB = 0) D44H8 – D45H8. V. Collector-emitter voltage (IB = 0) D44H11 – D45H V. VEBO. Emitter-base.

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Datasheet «D45H5»

Safe operating area Figure 3. Datasueet in this document supersedes and replaces all information previously supplied. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. D45H5 datasheet, cross reference, circuit and application notes in pdf format.

D45H5 Datasheet, PDF – Alldatasheet

Collector-emitter saturation voltage NPN Figure 7. Internal schematic diagram Table 1.


This product contains chemicals known to the State of California to cause cancer and birth defects or other reproductive harm. For PNP types voltage and current values are negative.

D45h5 datasheet pdf Derating curve Figure 4. For more information go to This item datashet manufactured prior to August 31st, Click to see Why is this here? They are intended for general purpose linear and switching applications.

If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such dxtasheet party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.

All other names are the property of their respective owners. Information in this document is provided solely in connection with ST products.


For PNP types voltage and current values are negative. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document.

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