BUT11AF datasheet, BUT11AF pdf, BUT11AF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Silicon Transistor. BUT11AF. GENERAL DESCRIPTION. High-voltage, high-speed glass- passivated npn power transistor in a SOT envelope with electrically. BUT11AF NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage: BUT11AF.

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The information presented in this document does not form part of any quotation fatasheet contract, it is believed to be accurate and reliable and may be changed without notice. Typical base-emitter and collector-emitter saturation voltages. Test circuit resistive load.

But11af datasheet view

Extension for repetitive pulse operation. Region of permissible DC operation.

Test circuit inductive load. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

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BUT11AF Datasheet PDF –

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Reverse bias safe operating area.

Switching times waveforms with resistive load. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Refer to mounting instructions for F-pack envelopes. Normalised power derating and second breakdown curves.

Forward bias safe operating area. August 8 Rev 1.

BUT11AF datasheet, Pinout ,application circuits NPN Silicon Transistor

UNIT – – 1. Switching times waveforms with inductive load.

Exposure to limiting values for extended periods may affect device reliability. Typical DC current gain.

August 4 Ptot max and Ptot peak max lines. Oscilloscope display for VCEOsust. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This but11sf sheet contains final product specifications. Test datasheeet for VCEOsust. Application information Where application information is given, it is advisory and does not form part of the specification.

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No liability will be accepted by the publisher for any consequence of its use. August 2 Rev 1.

NPN Silicon Transistor

Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

SOT; The seating plane is electrically isolated from all terminals. August 7 Rev 1. Stress above one or more of the limiting values may cause permanent damage to the device.

Typical base-emitter saturation voltage.