BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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Buaf datasheet, equivalent, cross reference search. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. II Extension for repetitive pulse operation.

Reproduction in whole or in part is prohibited without the prior written consent datashest the copyright owner. Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications.

July 6 Rev 1. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.


Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack.

Exposure to limiting values for extended periods may affect device reliability. Application information Where application satasheet is given, it is advisory and does not form part of the specification. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated datasheey diode in a plastic fullpack envelope.

Buaf transistor equivalent substitute crossreference search. July datashheet Rev 1.

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SOT; The seating plane is electrically isolated from all terminals. No liability will be accepted by dataeheet publisher for any consequence of its use.

Refer to mounting instructions for F-pack envelopes. This data sheet contains final product specifications. July 7 Rev 1. Typical collector-emitter saturation voltage. Budf transistor equivalent substitute crossreference search. July 1 Rev 1.

Philips customers using or selling these products for use in such applications do bu508df at their own risk and bu2508ff to fully indemnify Philips for any damages resulting from such improper use or sale. Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet. July 2 Rev 1. C 1 Turn-off current. Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml.


BUDF 데이터시트(PDF) – NXP Semiconductors

This data sheet contains target or goal specifications for product development. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.

C I Region of permissible DC operation. Budf philips semiconductors, budf datasheet.

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Typical collector storage and fall time. Forward bias safe operating area. Typical DC current gain. Typical base-emitter saturation voltage.

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High collectorbase voltagevcbov high speed switching. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

Stress above one or more of the limiting values may cause permanent damage to the device. Silicon diffused power transistor buaf datasheet catalog.