The usual method of determining DRAM node is to take half the minimum WL or BL pitch. That places this DRAM at the nm process node. A 6F 2 DRAM cell with paired cells is described. In one embodiment the cell pairs are separated by n-type isolation transistors having gates defining dummy. PURPOSE: A semiconductor memory device provided with 6F2 dynamic random access memory(DRAM) is provided to increase a sensing margin by enlarging.

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More specifically the present invention with dfam to the accompanying drawings, as follows. Retrieved from ” https: STI is used between each of the diffusions. Semiconductor device including square type storage node and method of manufacturing the same.

KRA – A semiconductor device having 6F2 DRAM cell – Google Patents

In one embodiment, the dummy word lines are maintained at a potential less than zero volts relative to zero volts of the substrate. The gates of these transistors define dummy word lines such as lines 32 and 33 of FIG. Being an active region formed in a tilt with respect to dtam bit line wave Wave shape, the active region is formed in the active region and a zigzag manner are connected to the bit line neighboring the two intersecting the word lines and the bit lines a dran memory device provided with dgam 6F 2 DRAM cell, including that in contact.

Method of manufacturing a multilayered doped conductor for a contact in an integrated circuit device. The process P 1 begins in a step S 1. Media needing categories as of 11 May One method of isolating devices involves the formation of a semi-recessed or fully recessed oxide in the non-active or field area of the substrate.

WOA1 – 6f2 dram cell – Google Patents

In one embodiment, the first switch comprises at least one NMOS transistor having a draina source and a gate What is claimed is: The cells for the layout of Figure 2 have an effective area of 6F2 and are fabricated with a logic-based fabrication process. The DRAM array of claim 1wherein the bit line is a metal line disposed above the pairs of cells in the array.

One cell in each pair of cells is accessed by the potential on word line The array of claim 1, wherein the dummy word is coupled to a negative potential with respect to a substrate potential. One or more data storage devices are also typically coupled to the processor to allow the processor to store data or retrieve data from internal or external storage media not shown. The DRAM of claim 20, wherein each pair of cells is disposed in a common diffusion zone.

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As will be seen in Figure 2 this reduces the horizontal dimension of the cell pairs and more readily facilitates a single contact 28 to the overlying bit line 18 for a cell pair. The transistor is configured to supply a suitable voltage to the isolation gate to isolate one of the pair of rows from another of the pair of rows in response to a control signal.

US8519462B2 – 6F2 DRAM cell – Google Patents

Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. DE DET5 en The principles of the present invention according to 6F 2 DRAM cell, the active region of the I-type about the bit lines 20 and 40 also tilt wave Wave being formed into a shape, a zigzag shape on the active inter-region connected to the bit line neighboring because the configuration is formed wherein the active area around the bit lines means that the bit line contact is based on the minimum line width of F interval between increasing the bit line contact margin is formed in the center of the active region and the bit line at 1F 2F increasing the parasitic capacitance of the bit line is reduced to as being increases the sensing margin, also configured in a zigzag form in the inter-region said active or so that the word line formed in a wave wave shape the design rules and increase the interval between the active region increasing the invention for.

This, in turn, increases power dissipation by the memory array 50 and also reduces maximum data availability. However, there is sufficient spacing between the capacitors for the illustrated embodiment 6ff2 allow the fabrication of drak cells within the 6F 2 area for this COB cell.

KR20030092861A – A semiconductor device having 6F2 DRAM cell – Google Patents

Contact 86 is surrounded by an insulator, sometimes referred to as the 0 dran interlayer dielectric ILD. However, the metal lines defining the gates for the isolation transistors comprise a material favoring a p-type device, more specifically a metal with a work function between approximately 4.


This page was last edited on 13 Mayat Semiconductor integrated device having a field-effect transistor type memory cell array and peripheral circuitry structure.

When we look at the pitch of the diffusions in this new DRAM, we see it is much tighter. If the file has been modified from its original state, some details such as the timestamp may not fully reflect those of the original file.

Similarly, the pair of cells 12 is connected to a bit line 24 providing one input to the sense amp In a further aspect, the present invention includes a method of stress testing an isolation gate formed between two rows of memory cells in a DRAM array. f62

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The first 72 and second 84 diffusion regions and the first one of the wordlines 22 together with the first gate dielectric 76 form one of the access devices 14 of FIG. Vertical transistor devices, memory arrays, and methods of forming vertical transistor devices.

Comments won’t automatically be posted to your social media accounts unless you select to share. In one embodiment serpentine shaped fin-like, semiconductor bodies 4041 and 42 are etched from a p-type bulk silicon substrate, each of the bodies 4041 and 42 are generally parallel to an adjacent bit line such as bit lines 4344 and 45respectively.

Wafer level burn-in of memory integrated circuits. Integrated circuit having a memory cell array and method of forming an integrated circuit. Next we did a bevel-section of the part to take a look at the cell array. Thus, DRAM drm have been described where the cells are paired using a common bit line contact and where the cells have an area equal to 6F 2. The method of claim 14, further comprising forming a second switch having first and second load electrodes and a control electrode configured to vram a second control signal, the first load electrode being coupled to the isolation gate and the second load electrode being configured to be coupled to ground.

Our up-coming reports will give many more details on this fascinating part. As we noted above, a 4F 2 cell really should have transistors at every possible transistor dramm.