2SK datasheet, 2SK circuit, 2SK data sheet: TOSHIBA – N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS), alldatasheet. 2SK, datasheet for 2SK – N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) provided by Toshiba Semiconductor. 2SK pdf . Toshiba 2SK 17 available from 2 distributors. Explore Discrete Semiconductors on Octopart: the fastest source for datasheets, pricing, specs and .

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See my other reply! Alan djk is right! And also if current differ from high to low to high.

2SK1529 Datasheet

Then choose a final capacitor 1. I think the problem you have is thermal runaway as that the S only have a negative voltage quoeficient at 3 Amp.

Go to this site: Burning is typical unstable Circuit. What about the quality of these BUZ?

From the circuit and to gate, placed close to the Gate Value can between about ohms By the way, try to keep the distance between circuit and MOSFETs short as possible! Thermal Runaway posted by djk on January 06, at Amp fixing groman Thanks for the advice – akltam Santos on January 06, at The more common, cheaper, drain to the case are of a vertical construction.


I guess I will not use SJ for this circult. I was suggested that some of these devices are pretty unstable in the first hours. It shares with the IGBT an isolated gate that makes it easy to drive. I rebuild the whole thing and this time I used around 50ma per pair, i.

2sk datasheet pdf

Alan I don’t think the problem is with the transistors. Thanks for the advice – J. Any experience on 2SJ and 2SK? Many thanks for all of you who has helped. I don’t think it’s the transistor but a problem elsewhere. Catasheet – akltam Farnell Electronics is a distributor.

That has led me to believe that the Mosfet itself could be the cause. IRF datasheet groman Two Words – djk I think you know about those. FETs are unipolar transistors as they involve single-carrier-type operation.

I think that you don’t have it as with the Sj is not nedded Produst description The Field-Effect Transistor FET is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material.

And the Sj have it at mA. How big are your gate resistors?

Compared to the other power semiconductor devices, for example IGBT, Thyristor, its main advantages are high commutation speed and good efficiency at low voltages.


The MOSFET is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Thanks for the advice posted by J. Try up to R. Posted by akltam on January 05, at Jorge Dataheet Thermal Runaway – djk Does anyone has such experience with SJ and SK The bias currents you were using should be fine unless you have a way too high voltage across the transistors.

Check the devices data sheets. They are very difficult to stabilize without some sort of bias servo. And would try the parallel cap as suggested. Yours information is very valuable. Is there a schematic of the amp you’re using anywhere on the Web? They need to be as close as possible to the ouput transistors.

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Thanks for you reply. Really lots of thanks here. Check for high frquency oscillations MHz range. Two pairs were used per channel.