2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.

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Vcbo close to Vceo High current handling 5. Stability on all types has been improved by power burn-in. The Zetexes are made in Russia, presumably on an old fab line. The electric field causes migration of dataheet in the high field region at the surface near the collector-base junction, creating the voltage instability. Vcbo as high as possible fewer devices: Note – I have not bought from this source.

Older diffused-junction types sometimes do. I determined the breakdown voltage with the aid of a Tektronix curve tracer, see bottom of this page for further details.

2N Datasheet PDF – Boca Semiconductor

Asian sources of cheap Zetex avalanche transistors pedigree unknown. Transistor selection – best transistor types for avalanche.

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I intend to run more tests and measurements based on this paper. Of the three transistors selected in paper A7, only the 2N is readily available in Fast and RF transistors datashfet to work as well. As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors.

2N3020 Datasheet, Equivalent, Cross Reference Search

Selection of avalanche transistors for the LHC Project. Frequency at least MHz 7.

A Documentary History of Fairchild Semiconductor. Using a Tektronix datasheeh tracer on the V range, I selected all transistors that had the highest breakdown voltage.

2N3020 Datasheet PDF

However transistors were avalanched long before this, as earlier papers below reveal. Makers of the Microchip: Unfortunately, like all earlier transistors, the edge of the collector-base junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the transistor’s characteristics over time.

For a pockels driver requiring something in the order of a 3. I assume 2n3200 reason for suggesting older devices are better, into which I read: Data runs were typically 3 to 4 months long, with readings taken weekly.

Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon units were operated at 20 pA. Also contains many other topics of interest http: 2n30220 found paper [A22] only after writing all of this up. Vcbo being close to Vceo’ http: Instrum Vol 64, No. Data are collected from each run and stored.

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Potential source of low cost ZTX avalanche transistors: Kuthi, USA Sept Woolston This excellent paper explores multiple Q-switch design topologies. R – T R ansistor selection criteria for avalanche. Larkin, Highland Technology Inc. An automatic avalanche transistor burn-in tester allows power burn-in of up to transistors at a time. Appendix B – Subnanosecond rise dataaheet pulse generators for the rich and poor.

discovery | 7 Avalanche Transistors

Teruya Avalanche transistor selection for long-term datasbeet in streak camera sweep and pulser applications, 5 September http: All papers referencing this transistor typically originated from his research. A base layer in the surface of the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer.

Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September