SEMICONDUCTOR. DSY. 64K Nonvolatile SRAM. PIN ASSIGNMENT. FEATURES. 10 years minimum data retention in the absence of external power. CC. DSY Datasheet, DSY 64k Nonvolatile SRAM Datasheet, buy DSY DSY datasheet, DSY pdf, DSY data sheet, datasheet, data sheet, pdf, Dallas Semiconductor, 64K Nonvolatile SRAM.

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All address inputs datasehet be kept valid throughout the write cycle. AA designates the year of manufacture. EDIP is wave or hand soldered only. The expected datasheeet is defined as starting at the date of manufacture.

In a power down condition the voltage on any pin may not exceed the voltage on VCC. AA designates the year of manufacture. WE must return to the high state for a minimum recovery time tWR before another cycle can be initiated. WE is high for a read cycle. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.

Data is maintained in the absence of VCC without any additional support circuitry. DM Quad 2-Input Exclusive. As VCC falls below approximately 3.

DSY Datasheet(PDF) – Dallas Semiconductor

All voltages are referenced to ground. All address inputs must be kept valid throughout the write cycle. Valid data will be available to the eight data output drivers within tACC Access Time after the last address input signal is stable, providing that CE and OE access times are also satisfied. The unique address specified by the 13 address inputs A0—A12 defines which of the bytes of data is to be accessed. BB designates the week of manufacture.

The expected tDR is defined as starting at the date of manufacture. The write cycle is terminated by the earlier rising edge of CE or WE. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain in a high impedance state during this period.

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Data is maintained in the absence of VCC without any additional support circuitry. All AC and DC electrical characteristics are valid over the full operating temperature range.

The latter occurring falling edge of CE or WE will determine the start of the write cycle. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high-impedance state during this period. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Why bother to spell words correctly. The OE control signal should be kept inactive high during write cycles to avoid bus contention. If the CE low transition occurs simultaneously with or later than the WE low transition in Write Cycle 1, the output buffers remain in a high-impedance state during this period. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

DS1225Y Datasheet PDF

The write cycle is terminated by ds122y earlier rising edge of CE or WE. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.

If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high impedance state during this period. WE is high for a read cycle.

If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain in a high-impedance state during this period. In a power down condition the voltage on any pin may not exceed the voltage on VCC. During power-up, when VCC rises above approximately 3. The later-occurring falling edge of CE or WE will determine the start of the write cycle.

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Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery backup mode. Valid data will be available to the eight data output drivers within tACC Access Time after the last address input signal is stable, providing that CE and OE access times are also satisfied. Documents Flashcards Grammar checker. All AC and DC electrical characteristics datasheft valid over the full operating temperature range. All voltages are referenced to daasheet.

When such a condition occurs, the lithium datasheer source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.

During power—up, when VCC rises above approximately 3. If the CE low transition occurs simultaneously with or ds225y than the WE low transition in Write Cycle 1, the output buffers remain in a high impedance state during this period.

When cs1225y a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. As VCC falls below approximately 3. The OE control signal should be kept inactive high during write cycles to avoid bus contention. Storage Temperature Lead Temperature soldering, 10s Note: BB designates the week of manufacture.

Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery backup mode.