BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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No liability will be accepted by the publisher for any consequence of its use. Exposure to limiting values for extended periods may affect device reliability.
July 2 Rev 1. Typical DC current gain. This data sheet contains target or goal specifications for product development. Typical collector-emitter saturation voltage.
BU2508DF Silicon Diffused Power Transistor
Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. July 5 Rev 1. C 1 Turn-off current. Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet.
Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope.
BUDF NTE Equivalent NTE NPN horizontal defle – Wholesale Electronics
Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification datahseet not implied.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Forward bias safe operating area.
Refer to mounting instructions for F-pack envelopes. II Extension for repetitive pulse operation.
BU DF PHI: NPN+DIO SOT transistor V 8 A 45 W at reichelt elektronik
Budf philips semiconductors, budf datasheet. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. Buaf datasheet, equivalent, cross reference search.
Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack.
Application information Where application information is given, it is advisory and does not form part bu2508ddf the specification. Silicon diffused power transistor buaf datasheet catalog.
Typical base-emitter saturation voltage. Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications. Buaf transistor equivalent substitute crossreference search. High collectorbase voltagevcbov high speed switching.
Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.
July 7 Rev 1. Typical collector storage and fall time. Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml.
SOT; The seating plane is electrically isolated from all terminals.
July 6 Rev 1. Budf transistor equivalent substitute crossreference search. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
July 1 Rev 1. C I Region of permissible DC operation. This data sheet contains final product specifications.